AEC-Q101. Quoted current ratings apply when junction temperature Tc = +110°C. Automotive Ignition IGBT, Fairchild Semiconductor. These EcoSPARK IGBT devices are optimised for driving automotive ign...
Using the novel field stop 4th generation IGBT technology. FGHL50T65SQ is single IGBT. This IGBT offers the optimum performance with both low conduction loss and switching loss for a high efficienc...
The ON Semiconductor Field Stop Trench IGBT offers the optimum performance for both hard and soft switching topology in automotive application. It is a stand-alone IGBT.AEC-Q101 qualified High curr...
Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 238 W Package Type = TO-247-3L
The ON Semiconductor Field Stop Trench IGBT offers the optimum performance for both hard and soft switching topology in automotive application. It is a stand-alone IGBT.AEC-Q101 qualified High curr...
Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various a...
Maximum Continuous Collector Current = 50 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30.0V Maximum Power Dissipation = 268 W Package Type = TO-247 Channel Type = N ...
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 268 W Package Type = TO-247-3L
Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30.0V Maximum Power Dissipation = 134 W Package Type = TO-247 Channel Type = N...
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applicat...
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30.0V Maximum Power Dissipation = 268 W Package Type = TO-247 Channel Type = N ...
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30.0V Maximum Power Dissipation = 238 W Package Type = TO-247 Channel Type = N ...
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 1 Package Type = TO-247 Mounting Type = Through Hol...
The ON Semiconductor AFGHL series is IGBT which offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, which does not r...
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Number of Transistors = 30 Package Type = TO-247-3L
Maximum Continuous Collector Current = 150 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 1 Package Type = TO-247 Mounting Type = Through Ho...
The ON Semiconductor IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.175°C maximum jun...
Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 238 W Package Type = TO-247-3L
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 375 W Package Type = TO-247-4LD
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications wh...
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 268 W Package Type = TO-247-3L
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 15V Maximum Power Dissipation = 268 W Package Type = TO-247-4LD
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Number of Transistors = 30 Package Type = TO-247-3L
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 469 W Package Type = TO-247-4LD
Maximum Continuous Collector Current = 160 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±30V Number of Transistors = 1 Package Type = TO-247 Mounting Type = Through H...
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 268 W Package Type = TO-247-4LD
Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 1 Package Type = TO-247 Mounting Type = Through Ho...
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 153 W Package Type = TO-247
Maximum Continuous Collector Current = 200 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 1 Package Type = TO-247 Mounting Type = Through Ho...
AEC-Q101. Quoted current ratings apply when junction temperature Tc = +110°C. Automotive Ignition IGBT, Fairchild Semiconductor. These EcoSPARK IGBT devices are optimised for driving automotive ign...
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offer...