MOSFETs (906 artikelen)

Maximum Continuous Drain Current = 33 A Maximum Drain Source Voltage = 1200 V Series = SCTH40N Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0.105 O Maximum Gate Thr...

The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistan...

Maximum Continuous Drain Current = 36 A Maximum Drain Source Voltage = 1200 V Package Type = HiP247 Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.7 O Maximum Gate T...

The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistan...

Maximum Continuous Drain Current = 60 A Maximum Drain Source Voltage = 1200 V Package Type = HiP247-4 Mounting Type = Through Hole Pin Count = 4 Maximum Drain Source Resistance = 5.2e+007 Ω Maximum...

The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low...

The STMicroelectronics RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from...

Maximum Drain Source Voltage = 60 V Package Type = B2 Mounting Type = Surface Mount Pin Count = 2 Maximum Drain Source Resistance = 1 Ω Maximum Gate Threshold Voltage = 2.5V

Maximum Drain Source Voltage = 65 V Package Type = B4E Mounting Type = Surface Mount Pin Count = 4 Maximum Drain Source Resistance = 1 Ω Maximum Gate Threshold Voltage = 2.5V

The STMicroelectronics RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 16...

Maximum Continuous Drain Current = 90 A Maximum Drain Source Voltage = 1200 V Series = SCTH70N Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0.21 O Maximum Gate Thre...

The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistan...

Channel Type = N Maximum Continuous Drain Current = 13 A Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 280 mΩ Channel Mode = Enhancemen...

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh...

Channel Type = N Maximum Continuous Drain Current = 13 A Package Type = TO-220FP Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 280 mΩ Channel Mode = Enhancement Maxim...