MOSFETs (906 artikelen)

Channel Type = N Maximum Continuous Drain Current = 72 A Maximum Drain Source Voltage = 600 V Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 36 m...

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmes...

Maximum Continuous Drain Current = 75 A Maximum Drain Source Voltage = 1200 V Package Type = ACEPACK 2 Mounting Type = Chassis Mount

Maximum Continuous Drain Current = 75 A Maximum Drain Source Voltage = 1200 V Package Type = ACEPACK 2 Mounting Type = Chassis Mount

Maximum Continuous Drain Current = 75 A Maximum Drain Source Voltage = 1200 V Package Type = ACEPACK 2 Mounting Type = Chassis Mount

Maximum Continuous Drain Current = 75 A Maximum Drain Source Voltage = 1200 V Package Type = ACEPACK 2 Mounting Type = Chassis Mount

N-Channel STripFET™, STMicroelectronics

N-Channel STripFET™, STMicroelectronics

RF MOSFET Transistors, STMicroelectronics. The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

RF MOSFET Transistors, STMicroelectronics. The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

RF MOSFET Transistors, STMicroelectronics. The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

RF MOSFET Transistors, STMicroelectronics. The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

RF MOSFET Transistors, STMicroelectronics. The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

Maximum Drain Source Voltage = 65 V Package Type = B4E Mounting Type = Surface Mount Pin Count = 4 Maximum Drain Source Resistance = 1 Ω Maximum Gate Threshold Voltage = 2.5V

The STMicroelectronics RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 16...