MOSFETs (11.011 artikelen)

The Rohm N-channel power MOSFET featured with very fast switching and low resistance. It is mainly used in solar inverters, DC-DC converter, motor drive and induction heating.Simple to drive Easy t...

The Rohm N-channel power MOSFET featured with very fast switching and low resistance. It is mainly used in solar inverters, DC-DC converter, motor drive and induction heating.Simple to drive Easy t...

Channel Type = N Maximum Continuous Drain Current = 25 A Maximum Drain Source Voltage = 750 V Package Type = PowerFLAT 5x6 HV Mounting Type = Surface Mount Pin Count = 4 Channel Mode = Enhancement ...

Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free, Halogen Free/BFR Free Typical Appli...

Maximum Drain Source Voltage = 110 V Package Type = B4E Mounting Type = Surface Mount Pin Count = 5 Maximum Drain Source Resistance = 1 Ω Maximum Gate Threshold Voltage = 3V

Maximum Drain Source Voltage = 65 V Package Type = B4E Mounting Type = Surface Mount Pin Count = 4 Maximum Drain Source Resistance = 1 Ω Maximum Gate Threshold Voltage = 2.5V

Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Power 88 Package, Industry Standard These Devices are Pb−Free,...

Channel Type = N Maximum Drain Source Voltage = 90 V Package Type = LBB Mounting Type = Surface Mount Pin Count = 5 Maximum Drain Source Resistance = 1 Ω Maximum Gate Threshold Voltage = 2.5V

Channel Type = N Maximum Continuous Drain Current = 51 A Maximum Drain Source Voltage = 600 V Package Type = 8 x 8LR Mounting Type = Surface Mount Pin Count = 8 Channel Mode = Enhancement Number of...

The STMicroelectronics XXXx Is the state of the art LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. This product also finds application in 136...

The STMicroelectronics RF2L36075CF2 is a 75 W internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base stations and S-Band radar applications in the frequency range from...

RF MOSFET Transistors, STMicroelectronics. The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

Channel Type = N Maximum Continuous Drain Current = 225 A Maximum Drain Source Voltage = 1200 V Package Type = TO-247-4 Mounting Type = Through Hole Pin Count = 4 Number of Elements per Chip = 1

Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free Typical Appli...

Channel Type = N Maximum Continuous Drain Current = 30 A Maximum Drain Source Voltage = 1200 V Series = SCT Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 80 mO Maxim...

Channel Type = N Maximum Continuous Drain Current = 554.5 A Maximum Drain Source Voltage = 40 V Package Type = DFNW8 Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 66...

Channel Type = N Maximum Continuous Drain Current = 30 A Maximum Drain Source Voltage = 650 V Package Type = PowerPAK 10 x 12 Mounting Type = PCB Mount Pin Count = 8 Channel Mode = Enhancement Numb...

Channel Type = N, P Maximum Continuous Drain Current = 400 A Maximum Drain Source Voltage = 1200 V Package Type = AG-HYBRIDD-2 Mounting Type = Screw Mount

Channel Type = N Maximum Continuous Drain Current = 39 A Maximum Drain Source Voltage = 60 V Package Type = SuperSO8 5 x 6 Mounting Type = Surface Mount Pin Count = 8 Number of Elements per Chip = 1

Channel Type = N Maximum Continuous Drain Current = 114 A Maximum Drain Source Voltage = 150 V Package Type = SuperSO8 5 x 6 Mounting Type = Surface Mount Pin Count = 8 Number of Elements per Chip = 1

The Infineon IPDQ60R010S7 is the N channel power MOSFET and it enables the best performance for low frequency switching applications. The MOSFET is optimized for static switching and high current a...

Channel Type = N Maximum Continuous Drain Current = 230 A Maximum Drain Source Voltage = 100 V Package Type = SuperSO8 5 x 6 Mounting Type = Surface Mount Pin Count = 8 Number of Elements per Chip = 1

Channel Type = N Maximum Continuous Drain Current = 81 A Maximum Drain Source Voltage = 1200 V Package Type = TO-247N Mounting Type = Surface Mount Pin Count = 3 Channel Mode = Enhancement Number o...

Channel Type = N Maximum Continuous Drain Current = 105 A Maximum Drain Source Voltage = 750 V Package Type = TO-247N Mounting Type = Surface Mount Pin Count = 3 Channel Mode = Enhancement Number o...

Channel Type = N Maximum Continuous Drain Current = 440 A Maximum Drain Source Voltage = 40 V Package Type = SO-8 Mounting Type = Surface Mount Pin Count = 8 Channel Mode = Enhancement Number of El...

N-channel MDmesh™ M5 Series, STMicroelectronics. The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combin...

DC-DC Converters Switching Voltage Regulators Motor Drivers High-speed switching Small gate charge: QSW = 22 nC (typ.) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) Low leaka...

Channel Type = N Maximum Continuous Drain Current = 192 A Maximum Drain Source Voltage = 100 V Package Type = TDSON Mounting Type = Surface Mount Pin Count = 8 Number of Elements per Chip = 1

The ON Semiconductor NTMFS series is n-channel MOSFET which has drain to source voltage of 100 V. It is typically used synchronous rectification and DC-DC conversion.Pb−Free RoHS compliant

Channel Type = N Maximum Continuous Drain Current = 334 A Maximum Drain Source Voltage = 60 V Package Type = SO-8 Mounting Type = Surface Mount Pin Count = 8 Channel Mode = Enhancement Number of El...

Channel Type = N Maximum Continuous Drain Current = 10 A Maximum Drain Source Voltage = 600 V Series = CoolGaN Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 0.19 Ω M...

Channel Type = N Maximum Continuous Drain Current = 30.8 A Maximum Drain Source Voltage = 600 V Package Type = DFN Mounting Type = Surface Mount Pin Count = 5 Maximum Drain Source Resistance = 109 ...

Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank capable for Enhanced Optical Inspection. MOSFE...

Channel Type = N Maximum Continuous Drain Current = 288 A Maximum Drain Source Voltage = 60 V Package Type = SuperSO8 5 x 6 Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistan...

The Toshiba silicon N-channel MOSFET having high-speed switching properties. It is mainly used in high-efficiency DC-DC converters, switching voltage regulators and motor drivers.Low drain-source o...

Channel Type = N Maximum Continuous Drain Current = 277 A Maximum Drain Source Voltage = 100 V Package Type = 8 x 8L Mounting Type = Surface Mount Pin Count = 4 Channel Mode = Enhancement Number of...

Channel Type = N Maximum Continuous Drain Current = 34 A Maximum Drain Source Voltage = 650 V Package Type = PowerPAK 10 x 12 Mounting Type = Surface Mount Pin Count = 8 Number of Elements per Chip...

Channel Type = N Maximum Continuous Drain Current = 500 A Maximum Drain Source Voltage = 40 V Package Type = LFPAK88 Mounting Type = Surface Mount Pin Count = 4 Number of Elements per Chip = 1

The ON Semiconductor NTMTS series is n-channel MOSFET which has drain to source voltage of 100 V. It is typically used synchronous rectification and DC-DC conversion.Pb−Free RoHS compliant

Channel Type = N Maximum Continuous Drain Current = 174 A Maximum Drain Source Voltage = 150 V Package Type = HSOF-8 Mounting Type = Surface Mount Pin Count = 8 Number of Elements per Chip = 1

Channel Type = N Maximum Continuous Drain Current = 150 A Maximum Drain Source Voltage = 40 V Series = TPHR8504PL Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 2.4 Ω...