Fast-recovery-diode  (1.698 artikelen gevonden)

Silicon Carbide Power MOSFET, C3M Series, Cree Inc. New C3M Silicon Carbide (SiC) MOSFET technology Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range Ne...

Fast Recovery Rectifiers 1A, Vishay Semiconductor. Versatile and high-efficiency Fast recovery power diodes in industry-standard package styles. Low profile with height of 1mm Avalanche Rectifier

Ultrafast Recovery Rectifiers 1A, Vishay Semiconductor. Vishay ultrafast recovery rectifiers have very fast reverse recovery times as low as 15ns and voltage levels as high as 1500V. Typical applic...

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renew...

Fast Recovery Rectifiers 1A, Vishay Semiconductor. Versatile and high-efficiency Fast recovery power diodes in industry-standard package styles. Low profile with height of 1mm Avalanche Rectifier

Ultrafast Recovery Rectifiers 1A, Vishay Semiconductor. Vishay ultrafast recovery rectifiers have very fast reverse recovery times as low as 15ns and voltage levels as high as 1500V. Typical applic...

Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full adv...

Fast Recovery Rectifiers 1A, Vishay Semiconductor. Versatile and high-efficiency Fast recovery power diodes in industry-standard package styles. Low profile with height of 1mm Avalanche Rectifier

Ultrafast Recovery Rectifiers 6A to 12A, Vishay Semiconductor. Vishay ultrafast recovery rectifiers have very fast reverse recovery times as low as 15ns and voltage levels as high as 1500V. Typical...

1200V VBR (minimum) across entire operating temperature range [-40˚C – 175˚C] +15V gate drive voltage Low-impedance package with Kelvin source pin > 8mm of creepage/clearance between drain and sour...

Ultrafast Recovery Rectifiers 1A, Vishay Semiconductor. Vishay ultrafast recovery rectifiers have very fast reverse recovery times as low as 15ns and voltage levels as high as 1500V. Typical applic...

Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes pro...

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. MOSFET is designed to support new 1500V bus applications in topologies su...

Ultrafast Recovery Rectifiers 1A, Vishay Semiconductor. Vishay ultrafast recovery rectifiers have very fast reverse recovery times as low as 15ns and voltage levels as high as 1500V. Typical applic...

Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed. A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes pro...