Foto-diode  (612 artikelen gevonden)

Spectrums Detected = Visible Light Wavelength of Peak Sensitivity = 465/540/615nm Package Type = Plastic Mounting Type = Surface Mount Number of Pins = 6 Diode Material = Si

The Intelligent LED Solutions High speed, compact Si APD for LiDAR (800nm band) featuring low-bias operation.Small LED Package: 3.1 x 1.8 x 1.0mm Peak sensitivity wavelength: 800 nm (M=100) Size (L...

The ILD has high speed, compact Si APD for LiDAR (900nm band) featuring low-bias operation.200mm wires Peak sensitivity wavelength: 840nm (M=100) Size (L x W x H): 20mm x 20mm x 3.85mm Low bias ope...

High-density microcells J-Series sensors feature ON Semiconductors unique fast output terminal Temperature stability of 21.5 mV/°C Exceptional breakdown voltage uniformity of ±250 mV Available in a...

>40% PDE at 420 nm, and extended sensitivity to 300 nm for improved UV sensitivity Ultra-low dark count rates of 30 kHz/mm2 Exceptional breakdown voltage uniformity of ±250 mV over all C-Series pro...

High-density microcells J-Series sensors feature ON Semiconductors unique fast output terminal Temperature stability of 21.5 mV/°C Exceptional breakdown voltage uniformity of ±250 mV Available in a...

OSI APD Series 8-150 Silicon Avalanche Photodiodes. The APD series 8-150, from OSI Optoelectronics, are a family of silicon avalanche photodiodes, optimised for operation with 800nm wavelengths. Th...

Spectrums Detected = Infrared Wavelength of Peak Sensitivity = 1550nm Package Type = TO-46, TO-5 Mounting Type = Through Hole Number of Pins = 2 Diode Material = InGaAs Minimum Wavelength Detected ...

OSI APD Series 8-150 Silicon Avalanche Photodiodes. The APD series 8-150, from OSI Optoelectronics, are a family of silicon avalanche photodiodes, optimised for operation with 800nm wavelengths. Th...

OSI High Speed InGaAs Photodiodes. The FCI-InGaAs-xxx series, from OSI Optoelectronics, are high speed InGaAs photodiodes. They are ideal for Datacom and Telecom applications. These high speed phot...

>40% PDE at 420 nm, and extended sensitivity to 300 nm for improved UV sensitivity Ultra-low dark count rates of 30 kHz/mm2 Exceptional breakdown voltage uniformity of ±250 mV over all C-Series pro...

FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm and 3mm, are part of OSI Optoelectronics large active area IR sensitive detectors which exhibit excellent responsivity from 1100nm to 16...

OSI APD Series 8-150 Silicon Avalanche Photodiodes. The APD series 8-150, from OSI Optoelectronics, are a family of silicon avalanche photodiodes, optimised for operation with 800nm wavelengths. Th...

FCI-InGaAs-XXX-CCER with active area sizes of 70μm, 120μm, 300μm, 400μm, 500μm are part of OSI Optoelectronics high speed IR sensitive photodiodes mounted on gull wing ceramic substrates with glass...

High-density microcells J-Series sensors feature ON Semiconductors unique fast output terminal Temperature stability of 21.5 mV/°C Exceptional breakdown voltage uniformity of ±250 mV Available in a...