Transistor  (12.577 artikelen gevonden)

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. General Purpose NPN Transistors, up to 1A, ON Semiconductor

Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 268 W Package Type = TO-247-4LD

The ON Semiconductor IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.175°C maximum jun...

The 3 A, 100V PNP Bipolar Power Transistor designed for use in general purpose amplifier and switching applications. BD241C (NPN), BD242B (PNP) and BD242C (PNP) are complementary devices.Collector-...

Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 469 W Package Type = TO-247-4LD

Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 375 W Package Type = TO-247-4LD

Transistor Type = NPN Maximum Collector Emitter Voltage = 6 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Maximum Power Dissipation = 150 W Transistor Configuration = Single Pin Cou...

Maximum Collector Emitter Voltage = 950 V Maximum Power Dissipation = 453 W Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3 Transistor Configuration = Single Dimensions = 15.87 x 4...

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored ...

This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.RDS(on) = 6.25mΩ...

The MJ21195G and MJ21196G utilize Perforated Emitter technology and a specifically designed for high power audio output, disk head positioners and linear applications.Total Harmonic Distortion Char...

Maximum Continuous Collector Current = 200 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 15V Maximum Power Dissipation = 268 W Package Type = TO-247-4LD

Maximum Continuous Collector Current = 150 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 1 Package Type = TO-247 Mounting Type = Through Ho...

Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Number of Transistors = 30 Package Type = TO-247-4LD

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. NPN Darlington Transistors, ON Semiconductor