|  |
| |
| Artikelnr.:
3523E-1107445 Fabrikantnr.:
IGW75N60H3FKSA1 EAN/GTIN:
5059043422244 |
| |
|
| | |
| Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 600 to 650V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C Meer informatie: | | Maximum Continuous Collector Current: | 75 A | Maximum Collector Emitter Voltage: | 600 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 428 W | Package Type: | TO-247 | Mounting Type: | Through Hole | Channel Type: | N | Pin Count: | 3 | Transistor Configuration: | Single | Dimensions: | 16.13 x 5.21 x 21.1mm | Energy Rating: | 6.2mJ | Gate Capacitance: | 4620pF | Maximum Operating Temperature: | +175 °C | Minimum Operating Temperature: | -40 °C |
|
| | |
| | | |
| Andere zoekwoorden: Power-transistor, Schakeltransistor, Schakeltransistors, Transistor, Transistors, 1107445, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IGW75N60H3FKSA1 |
| | |
| |