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| Artikelnr.:
3523E-1339915 Fabrikantnr.:
IDH10G120C5XKSA1 EAN/GTIN:
5059043597119 |
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| thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon. The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications. Reduced EMI Meer informatie: | | Mounting Type: | Through Hole | Package Type: | TO-220 | Maximum Continuous Forward Current: | 31.9A | Peak Reverse Repetitive Voltage: | 1200V | Diode Configuration: | Single | Rectifier Type: | Schottky Diode | Diode Type: | SiC Schottky | Pin Count: | 2 + Tab | Maximum Forward Voltage Drop: | 2.6V | Number of Elements per Chip: | 1 | Diode Technology: | SiC Schottky | Peak Non-Repetitive Forward Surge Current: | 99A |
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| Andere zoekwoorden: Schottkydiode, 1339915, Semiconductors, Discrete Semiconductors, Schottky Diodes & Rectifiers, Infineon, IDH10G120C5XKSA1 |
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