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| Artikelnr.:
3523E-1349723 Fabrikantnr.:
SIR632DP-T1-RE3 EAN/GTIN:
5059040665910 |
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| N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 29 A | Maximum Drain Source Voltage: | 150 V | Package Type: | PowerPAK SO-8 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 41 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 69.5 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 6.25mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1349723, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIR632DPT1RE3 |
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