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| Artikelnr.:
3523E-1455670 Fabrikantnr.:
IRL640A EAN/GTIN:
5059042059120 |
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| Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild ‘s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching. Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 18 A | Maximum Drain Source Voltage: | 200 V | Package Type: | TO-220 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 180 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 110 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 10.67mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: mosfet 200v, 1455670, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, IRL640A |
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