|  |
| |
| Artikelnr.:
3523E-1513200 Fabrikantnr.:
PMPB215ENEAX EAN/GTIN:
5059043680491 |
| |
|
| | |
| 80 V, single N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection AEC-Q101 qualified Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 2.8 A | Maximum Drain Source Voltage: | 80 V | Package Type: | DFN2020 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 445 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.7V | Minimum Gate Threshold Voltage: | 1.3V | Maximum Power Dissipation: | 15.6 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | 20 V | Length: | 2.1mm | Maximum Operating Temperature: | +150 °C |
|
| | |
| | | |
| Andere zoekwoorden: 1513200, Semiconductors, Discrete Semiconductors, MOSFETs, Nexperia, PMPB215ENEAX |
| | |
| |