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| Artikelnr.:
3523E-1528344 Fabrikantnr.:
PMDXB950UPELZ EAN/GTIN:
5059043632896 |
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| P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.20 V, dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Low leakage current Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω Relay driver High-speed line driver High-side load switch Switching circuits Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 500 mA | Maximum Drain Source Voltage: | -20 V | Package Type: | DFN1010B-6 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 3.5 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | -0.95V | Minimum Gate Threshold Voltage: | -0.45V | Maximum Power Dissipation: | 4025 mW | Maximum Gate Source Voltage: | 8 V | Length: | 1.15mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 2 |
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