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| Artikelnr.:
3523E-1530676 Fabrikantnr.:
PMV280ENEAR EAN/GTIN:
5059043362311 |
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| N-channel MOSFETs 75 V - 200 V, You have now entered one of the worlds foremost standard MOS portfolios, Looking for high-reliability MOSFETs in the 75 V to 200 V range that simplify design-in? Our devices are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA). For example, our LFPAK power MOSFET range boasts ultra-low RDSon, high-speed switching and voltage ratings up to 200 V.100 V N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified Relay driver High-speed line driver Low-side loadswitch Switching circuits Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 1 A | Maximum Drain Source Voltage: | 100 V | Package Type: | SOT-23 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 892 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.7V | Minimum Gate Threshold Voltage: | 1.3V | Maximum Power Dissipation: | 5 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | 20 V | Length: | 3mm | Maximum Operating Temperature: | +150 °C |
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