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| Artikelnr.:
3523E-1531876 Fabrikantnr.:
PMV27UPEAR EAN/GTIN:
5059043691770 |
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| P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability: Ptot = 980 mW ElectroStatic Discharge (ESD) protection 2 kV HBM AEC-Q101 qualified LED driver Power management High-side loadswitch Switching circuits Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 5.6 A | Maximum Drain Source Voltage: | -20 V | Package Type: | SOT-23 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 63 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | -0.95V | Minimum Gate Threshold Voltage: | -0.45V | Maximum Power Dissipation: | 4150 mW | Transistor Configuration: | Single | Maximum Gate Source Voltage: | 8 V | Length: | 3mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1531876, Semiconductors, Discrete Semiconductors, MOSFETs, Nexperia, PMV27UPEAR |
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