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| Artikelnr.:
3523E-1531880 Fabrikantnr.:
NX7002BKXBZ EAN/GTIN:
5059043666808 |
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| N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).60 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Logic-level compatible Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Relay driver High-speed line driver Low-side loadswitch Switching circuits Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 260 mA | Maximum Drain Source Voltage: | 60 V | Package Type: | DFN1010B-6 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 5.7 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.1V | Minimum Gate Threshold Voltage: | 1.1V | Maximum Power Dissipation: | 4032 mW | Maximum Gate Source Voltage: | 20 V | Length: | 1.15mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 2 |
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