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| Artikelnr.:
3523E-1531958 Fabrikantnr.:
PMXB40UNEZ EAN/GTIN:
5059043688183 |
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| 12 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV Very low Drain-Source on-state resistance RDSon = 34 mΩ Very low threshold voltage of 0.65 V for portable applications Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 3.2 A | Maximum Drain Source Voltage: | 12 V | Package Type: | DFN1010D-3 | Mounting Type: | Surface Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 121 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 0.9V | Minimum Gate Threshold Voltage: | 0.4V | Maximum Power Dissipation: | 8.33 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | 8 V | Length: | 1.15mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1531958, Semiconductors, Discrete Semiconductors, MOSFETs, Nexperia, PMXB40UNEZ |
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