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| Artikelnr.:
3523E-1663429 Fabrikantnr.:
FDD18N20LZ EAN/GTIN:
5059042267020 |
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| UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts. Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 16 A | Maximum Drain Source Voltage: | 200 V | Package Type: | DPAK (TO-252) | Series: | UniFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 130 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 3V | Maximum Power Dissipation: | 89 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 6.73mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1663429, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FDD18N20LZ |
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