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| Artikelnr.:
3523E-1684886 Fabrikantnr.:
C3M0065100K EAN/GTIN:
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| Silicon Carbide Power MOSFET, C3M Series, Cree Inc. New C3M Silicon Carbide (SiC) MOSFET technology Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range New low-impedance package with driver source 8 mm of creepage/clearance between Drain and Source High-speed switching with low output capacitance High blocking voltage with low Drain-Source On-State Resistance Avalanche ruggedness Fast intrinsic diode with low Reverse Recovery Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 35 A | Maximum Drain Source Voltage: | 1000 V | Package Type: | TO-247-4 | Series: | C3M | Mounting Type: | Through Hole | Pin Count: | 4 | Maximum Drain Source Resistance: | 90 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.5V | Minimum Gate Threshold Voltage: | 1.8V | Maximum Power Dissipation: | 113.5 W | Maximum Gate Source Voltage: | -8 V, +19 V | Length: | 16.13mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: MOSFET-transistor, 1684886, Semiconductors, Discrete Semiconductors, MOSFETs, Wolfspeed, C3M0065100K |
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