N-Channel MOSFET, 20.7 A, 650 V, 3-Pin TO-220 FP Infineon SPA20N60C3XKSA1

Infineon MOSFETThe Infineon through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 190mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 20.7A. It has a maximum gate-source voltage of 20V and drain-source voltage of 600V. It has a maximum power dissipation of 71W. The MOSFET has a driving voltage of 10V. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.Features and Benefits• Ease of use • Field proven CoolMOS quality • High efficiency and power density • High reliability • Low gate charge (Qg) • Low specific on state resistance • Operating temperature ranges between -55°C and 150°C • Outstanding cost to performance • Very low energy storage in output capacitance (Eoss) at 400VApplications• Adapter • PC power • Server power supplies • TelecommunicationCertifications• ANSI/ESD S20.20:2014 • BS EN 61340-5-1:2007 • JEDEC