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| Artikelnr.:
3523E-1711945 Fabrikantnr.:
IPD200N15N3GATMA1 EAN/GTIN:
5059043822648 |
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| The Infineon IPD200N15N3 G is 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part.Excellent switching performance Worlds lowest R DS(on) Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 50 A | Maximum Drain Source Voltage: | 150 V | Package Type: | DPAK (TO-252) | Series: | IPD200N15N3 G | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 20 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 150 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | 20 V | Length: | 10.36mm |
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| Andere zoekwoorden: 1711945, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPD200N15N3GATMA1 |
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