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| Artikelnr.:
3523E-1712422 Fabrikantnr.:
TK33S10N1Z EAN/GTIN:
5059041787086 |
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| Channel Type = N
Maximum Continuous Drain Current = 33 A
Maximum Drain Source Voltage = 100 V
Package Type = DPAK (TO-252)
Mounting Type = Surface Mount
Pin Count = 3
Maximum Drain Source Resistance = 9.7 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Power Dissipation = 125 W
Transistor Configuration = Single
Maximum Gate Source Voltage = ±20 V
Width = 7mm
Forward Diode Voltage = 1.2V Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 33 A | Maximum Drain Source Voltage: | 100 V | Package Type: | DPAK (TO-252) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 9.7 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 125 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 6.5mm | Maximum Operating Temperature: | +175 °C |
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| Andere zoekwoorden: 1712422, Semiconductors, Discrete Semiconductors, MOSFETs, Toshiba, TK33S10N1Z |
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