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| Artikelnr.:
3523E-1723367 Fabrikantnr.:
NVD5C464NT4G EAN/GTIN:
5059042532067 |
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| SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.700 V @ TJ = 150 oC Higher system reliability at low temperature operation Ultra Low Gate Charge (Typ. Qg = 259 nC) Lower switching loss Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF) Lower switching loss Excellent body diode performance (low Qrr, robust body diode) Higher system reliability in LLC and Phase shift full bridge circuit Optimized Capacitance Lower peak Vds and lower Vgs oscillation Typ. RDS(on) = 23 mΩ Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 59 A | Maximum Drain Source Voltage: | 40 V | Package Type: | DPAK (TO-252) | Series: | NVD5C464N | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 5.8 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 40 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 6.73mm |
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| Andere zoekwoorden: 1723367, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NVD5C464NT4G |
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