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| Artikelnr.:
3523E-1724630 Fabrikantnr.:
FCB199N65S3 EAN/GTIN:
5059042278729 |
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| SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.700 V @ TJ = 150 oC Higher system reliability at low temperature operation Ultra Low Gate Charge (Typ. Qg = 30 nC) Lower switching loss Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF) Lower switching loss Optimized Capacitance Lower peak Vds and lower Vgs oscillation Internal Gate resistance: 7.0 ohm Lower peak Vds and lower Vgs oscillation Typ. RDS(on) = 170 mΩ Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 14 A | Maximum Drain Source Voltage: | 650 V | Package Type: | D2PAK (TO-263) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 199 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.5V | Minimum Gate Threshold Voltage: | 2.5V | Maximum Power Dissipation: | 98 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±30 V | Length: | 10.67mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1724630, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FCB199N65S3 |
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