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| Artikelnr.: 3523E-1779850 Fabrikantnr.: TN2106N3-G EAN/GTIN: 5059045478034 |
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| This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 300 mA | Maximum Drain Source Voltage: | 60 V | Package Type: | TO-92 | Series: | TN2106 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 5 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2V | Minimum Gate Threshold Voltage: | 0.6V | Maximum Power Dissipation: | 740 mW | Transistor Configuration: | Single | Maximum Gate Source Voltage: | 20 V | Length: | 5.08mm |
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| Andere zoekwoorden: 1779850, Semiconductors, Discrete Semiconductors, MOSFETs, Microchip, TN2106N3G |
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