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| Artikelnr.:
3523E-1861481 Fabrikantnr.:
NVB082N65S3F EAN/GTIN:
5059045656227 |
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| SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.700 V @ TJ = 150°C Typ. RDS(on) = 64 m Ultra Low Gate Charge (Typ. Qg = 81 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF) These Devices are Pb−Free Typical Applications Automotive On Board Charger Automotive DC/DC Converter for HEV Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 40 A | Maximum Drain Source Voltage: | 650 V | Package Type: | D2PAK (TO-263) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 82 mΩ | Channel Mode: | Enhancement | Maximum Power Dissipation: | 313 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±30 V | Length: | 10.67mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 | Typical Gate Charge @ Vgs: | 81 nC @ 10 V |
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| Andere zoekwoorden: 1861481, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NVB082N65S3F |
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