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| Artikelnr.:
3523E-1884940 Fabrikantnr.:
SISS73DN-T1-GE3 EAN/GTIN:
5059045757344 |
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| P-Channel 150 V (D-S) MOSFET.TrenchFET® with ThunderFET technology Very low RDS(on) minimizes power loss from conduction Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 16.2 A | Maximum Drain Source Voltage: | 150 V | Package Type: | PowerPAK 1212-8S | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 125 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 65.8 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 3.3mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1884940, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SISS73DNT1GE3 |
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