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| Artikelnr.:
3523E-1884951 Fabrikantnr.:
SIS862ADN-T1-GE3 EAN/GTIN:
5059045841616 |
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| N-Channel 60 V (D-S) MOSFETTrenchFET® Gen IV power MOSFET Very low RDS x Qg figure-of-merit (FOM) Tuned for the lowest RDS x Qoss FOM Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 52 A | Maximum Drain Source Voltage: | 60 V | Package Type: | PowerPAK 1212-8 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 11 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.5V | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 39 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 3.15mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1884951, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIS862ADNT1GE3 |
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