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| Artikelnr.:
3523E-1885117 Fabrikantnr.:
SiSS61DN-T1-GE3 EAN/GTIN:
5059045813866 |
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| P-Channel 20 V (D-S) MOSFET.TrenchFET® Gen III p-channel power MOSFET Leadership RDS(on) in compact and thermally enhanced package Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 111.9 A | Maximum Drain Source Voltage: | 20 V | Package Type: | PowerPAK 1212-8S | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 9.8 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 0.9V | Minimum Gate Threshold Voltage: | 0.4V | Maximum Power Dissipation: | 65.8 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±8 V | Length: | 3.3mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1885117, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiSS61DNT1GE3 |
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