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| Artikelnr.:
3523E-1885143 Fabrikantnr.:
SUP60020E-GE3 EAN/GTIN:
5059045753285 |
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| N-Channel 80 V (D-S) MOSFET.TrenchFET® power MOSFET Maximum 175 °C junction temperature Very low Qgd reduces power loss from passing through Vplateau Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 150 A | Maximum Drain Source Voltage: | 80 V | Package Type: | TO-220AB | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 2.8 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 375 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 10.51mm | Maximum Operating Temperature: | +175 °C |
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| Andere zoekwoorden: 1885143, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SUP60020EGE3 |
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