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| Artikelnr.:
3523E-1952535 Fabrikantnr.:
NTMYS021N06CLTWG EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 27 A
Maximum Drain Source Voltage = 60 V
Package Type = LFPAK, SOT-669
Mounting Type = Surface Mount
Pin Count = 4
Maximum Drain Source Resistance = 31.5 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 2V
Minimum Gate Threshold Voltage = 1.2V
Maximum Power Dissipation = 28 W
Transistor Configuration = Single
Maximum Gate Source Voltage = ±20 V
Width = 4.25mm
Height = 1.15mm Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 27 A | Maximum Drain Source Voltage: | 60 V | Package Type: | LFPAK, SOT-669 | Mounting Type: | Surface Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 31.5 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2V | Minimum Gate Threshold Voltage: | 1.2V | Maximum Power Dissipation: | 28 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 5mm | Maximum Operating Temperature: | +175 °C |
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| Andere zoekwoorden: 1952535, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NTMYS021N06CLTWG |
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