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| Artikelnr.:
3523E-1952679 Fabrikantnr.:
STWA75N60DM6 EAN/GTIN:
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| These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) * area with one of the most effective switching behaviors available in the market for the most demanding high efficiency bridge topologies and ZVS phase-shift converters.Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance Extremely high dv/dt ruggedness Zener-protected Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 72 A | Maximum Drain Source Voltage: | 600 V | Package Type: | TO-247 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 36 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.75V | Minimum Gate Threshold Voltage: | 3.25V | Maximum Power Dissipation: | 446 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±25 V | Length: | 15.9mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1952679, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, STWA75N60DM6 |
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