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| Artikelnr.:
3523E-2025517 Fabrikantnr.:
STGWA40H65DFB2 EAN/GTIN:
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| The STMicroelectronics high-speed HB2 series IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficient Meer informatie: | | Maximum Continuous Collector Current: | 40 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 230 W | Number of Transistors: | 1 | Package Type: | TO-247 | Channel Type: | N | Pin Count: | 3 | Transistor Configuration: | Common Emitter |
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| Andere zoekwoorden: Transistor, Transistors, 2025517, Semiconductors, Discrete Semiconductors, IGBTs, STMicroelectronics, STGWA40H65DFB2 |
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