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| Artikelnr.:
3523E-2052494 Fabrikantnr.:
NTBG160N120SC1 EAN/GTIN:
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| The ON Semiconductor SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.Continuous Drain Current rating is 19.5A Drain to source on resistance rating is 224mohm Ultra Low Gate Charge High Speed Switching and Low Capacitance 100% Avalanche Tested Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 19.5 A | Maximum Drain Source Voltage: | 1200 V | Package Type: | D2PAK (TO-263) | Series: | NTB | Mounting Type: | Surface Mount | Pin Count: | 7 | Maximum Drain Source Resistance: | 225 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.3V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2052494, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, NTBG160N120SC1 |
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