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| Artikelnr.:
3523E-2067212 Fabrikantnr.:
STGWA75H65DFB2 EAN/GTIN:
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| The STMicroelectronics Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package.Maximum junction temperature: TJ = 175 °C Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive VCE(sat) temperature coefficient Meer informatie: | | Maximum Continuous Collector Current: | 115 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 357 W | Number of Transistors: | 1 | Package Type: | TO-247 | Pin Count: | 3 | Transistor Configuration: | Single |
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| Andere zoekwoorden: Power-transistor, Schakeltransistor, Schakeltransistors, Transistor, Transistors, 2067212, Semiconductors, Discrete Semiconductors, IGBTs, STMicroelectronics, STGWA75H65DFB2 |
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