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| Artikelnr.:
3523E-2108739 Fabrikantnr.:
STD12N60DM6 EAN/GTIN:
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| The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 10 A | Maximum Drain Source Voltage: | 600 V | Package Type: | DPAK (TO-252) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 390 mΩ | Maximum Gate Threshold Voltage: | 4.75V | Number of Elements per Chip: | 1 |
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