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| Artikelnr.:
3523E-2183060 Fabrikantnr.:
IPG20N10S436AATMA1 EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 20 A
Maximum Drain Source Voltage = 100 V
Series = OptiMOS™ -T2
Mounting Type = Surface Mount
Pin Count = 8
Maximum Drain Source Resistance = 0.036 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 3.5V
Number of Elements per Chip = 2 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 20 A | Maximum Drain Source Voltage: | 100 V | Package Type: | SuperSO8 5 x 6 Dual | Series: | OptiMOS™ -T2 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.036 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.5V | Number of Elements per Chip: | 2 | Transistor Material: | Si |
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| Andere zoekwoorden: 2183060, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPG20N10S436AATMA1 |
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