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| Artikelnr.:
3523E-2183093 Fabrikantnr.:
IRF100P218XKMA1 EAN/GTIN:
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| The Infineon 100 V N-Channel Power MOSFET. This MOSFET is ideal for high switching frequency applications.Very low RDS(on) Excellent gate charge x RDS(on) (FOM) Optimized Qrr 175°C operating temperature Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 483 A | Maximum Drain Source Voltage: | 100 V | Package Type: | TO-247 | Series: | StrongIRFET | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.00128 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.8V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2183093, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRF100P218XKMA1 |
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