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| Artikelnr.:
3523E-2183127 Fabrikantnr.:
IRLR2703TRPBF EAN/GTIN:
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| The Infineon HEXFET series N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mounting using vapour phase, infrared, or wave soldering techniques.Ultra Low On-Resistance Fast Switching Fully Avalanche Rated Lead free Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 23 A | Maximum Drain Source Voltage: | 30 V | Package Type: | DPAK (TO-252) | Series: | HEXFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.045 Ω, 0.065 Ω | Maximum Gate Threshold Voltage: | 1V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: mosfet 30v, 2183127, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRLR2703TRPBF |
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