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| Artikelnr.: 3523E-2184389 Fabrikantnr.: IGB50N65H5ATMA1 EAN/GTIN: geen gegevens |
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| Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 270 W Package Type = TO-263 Channel Type = N Pin Count = 3 Meer informatie: | | Maximum Continuous Collector Current: | 80 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | 20V | Maximum Power Dissipation: | 270 W | Number of Transistors: | 1 | Package Type: | TO-263 | Channel Type: | N | Pin Count: | 3 |
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| Andere zoekwoorden: Transistor, Transistors, 2184389, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IGB50N65H5ATMA1 |
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