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| Artikelnr.:
3523E-2196013 Fabrikantnr.:
IPT60R150G7XTMA1 EAN/GTIN:
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| The Infineon CoolMOS C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G Enables best-in-class R DS(on) in smallest footprint Inbuilt 4 th pin Kelvin source configuration and low parasitic source inductance (∼1nH) Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads Enables improved thermal performance R th Higher efficiency due to the improved C7 Gold technology and faster switching Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 23 A | Maximum Drain Source Voltage: | 650 V | Package Type: | HSOF-8 | Series: | C7 GOLD | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.15 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 2196013, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPT60R150G7XTMA1 |
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