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| Artikelnr.:
3523E-2224608 Fabrikantnr.:
AUIRF7103QTR EAN/GTIN:
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| The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.Advanced Planar Technology Dual N Channel MOSFET Low On-Resistance Logic Level Gate Drive Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 3 A | Maximum Drain Source Voltage: | 50 V | Package Type: | SO-8 | Series: | HEXFET | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.13 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
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| Andere zoekwoorden: 2224608, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, AUIRF7103QTR |
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