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| Artikelnr.: 3523E-2224622 Fabrikantnr.: BSC098N10NS5ATMA1 EAN/GTIN: geen gegevens |
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| The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The ″Field-Effect″ means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.Pb-free lead plating RoHS compliant Superior thermal resistance 100% avalanche tested Halogen-free according to IEC61249-2-23 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 60 A | Maximum Drain Source Voltage: | 100 V | Package Type: | SuperSO8 5 x 6 | Series: | OptiMOSTM5 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.0098 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.8V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
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| Andere zoekwoorden: 2224622, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, BSC098N10NS5ATMA1 |
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