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| Artikelnr.:
3523E-2224640 Fabrikantnr.:
IPA60R099P6XKSA1 EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 37.9 A
Maximum Drain Source Voltage = 650 V
Series = CoolMOS
Mounting Type = Through Hole
Pin Count = 3
Maximum Drain Source Resistance = 0.099 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 4.5V
Number of Elements per Chip = 1 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 37.9 A | Maximum Drain Source Voltage: | 650 V | Package Type: | TO-220 FP | Series: | CoolMOS™ | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.099 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.5V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
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| Andere zoekwoorden: 2224640, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPA60R099P6XKSA1 |
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