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| Artikelnr.:
3523E-2224644 Fabrikantnr.:
IPA70R900P7SXKSA1 EAN/GTIN:
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| The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss Product validation acc. JEDEC Standard Low switching losses (Eoss) Integrated ESD protection diode Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 6 A | Maximum Drain Source Voltage: | 700 V | Package Type: | TO-220 FP | Series: | CoolMOS | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.9 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.5V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
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| Andere zoekwoorden: 2224644, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPA70R900P7SXKSA1 |
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