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| Artikelnr.:
3523E-2224669 Fabrikantnr.:
IPD60N10S4L12ATMA1 EAN/GTIN:
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| The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The ″Field-Effect″ means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.Green Product (RoHS compliant) MSL1 up to 260°C peak reflow AEC Q101 qualified OptiMOS™ - power MOSFET for automotive applications Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 60 A | Maximum Drain Source Voltage: | 100 V | Package Type: | TO-252 | Series: | OptiMOS | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.012 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.1V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
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| Andere zoekwoorden: 2224669, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPD60N10S4L12ATMA1 |
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