|  |
| |
| Artikelnr.:
3523E-2224673 Fabrikantnr.:
IPD60R280P7ATMA1 EAN/GTIN:
geen gegevens |
| |
|
| | |
| The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The ″Field-Effect″ means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.Green Product (RoHS compliant) MSL1 up to 260°C peak reflow AEC Q101 qualified OptiMOS™ - power MOSFET for automotive applications Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 12 A | Maximum Drain Source Voltage: | 650 V | Package Type: | TO-252 | Series: | CoolMOS | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.28 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
|
| | |
| | | |
| Andere zoekwoorden: 2224673, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPD60R280P7ATMA1 |
| | |
| |