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| Artikelnr.:
3523E-2224747 Fabrikantnr.:
IRFH8311TRPBF EAN/GTIN:
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| The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The ″Field-Effect″ means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.Low RDSon (<1.15 mΩ) Low Thermal Resistance to PCB (<0.8°C/W) 100% Rg tested Low Profile (<0.9 mm) Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 30 A | Maximum Drain Source Voltage: | 80 V | Package Type: | PQFN 5 x 6 | Series: | HEXFET | Mounting Type: | Surface Mount | Pin Count: | 4 | Maximum Drain Source Resistance: | 0.0021 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.35V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
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| Andere zoekwoorden: 2224747, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRFH8311TRPBF |
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