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| Artikelnr.:
3523E-2224833 Fabrikantnr.:
IDW10G120C5BFKSA1 EAN/GTIN:
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| The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 10 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.Best-in-class forward voltage (VF) No reverse recovery charge Mild positive temperature dependency of VF Best-in-class surge current capability Excellent thermal performance Meer informatie: | | Mounting Type: | SMD | Package Type: | TO-247 | Maximum Continuous Forward Current: | 10A | Peak Reverse Repetitive Voltage: | 1200V | Rectifier Type: | Schottky Diode | Diode Type: | SiC Schottky | Pin Count: | 3 | Number of Elements per Chip: | 1 | Diode Technology: | SiC Schottky |
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