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| Artikelnr.:
3523E-2266105 Fabrikantnr.:
IKP39N65ES5XKSA1 EAN/GTIN:
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| The Infineon IKP39N65ES5 has highest power density in TO-220 footprint and no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.Very low VCEsat of 1.45 V at 25°C 4 times Ic pulse current (100°C Tc) Maximum junction temperature Tvj 175°C Meer informatie: | | Maximum Continuous Collector Current: | 62 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | 30V | Maximum Power Dissipation: | 188 W | Number of Transistors: | 1 | Configuration: | Single | Package Type: | PG-TO220 | Channel Type: | N | Pin Count: | 3 | Transistor Configuration: | Single |
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| Andere zoekwoorden: Transistor, Transistors, 2266105, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKP39N65ES5XKSA1 |
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